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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 DESCRIPTION *With TO-3PN package. *High voltage. *High switching speed. APPLICATIONS *Horizontal deflection for colour TV and monitors. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current Base current -peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 14 18 8 11 160 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=10mA; IC=0 IC=100mA; IB=0 IC=10A; IB=2A IC=10A; IB=2A VCE=1500V ;VBE=0 Tj=125C VEB=5V; IC=0 IC=10A ; VCE=5V 7 10 MIN 10 700 1.5 1.5 0.2 2 0.1 14 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE Switching times ts tf Storage time IC=10A;IB1=2A;IB2=-6A; VCC=400V Fall time 110 ns 1.5 s THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 0.78 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH1015 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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